ESH3B
Taiwan Semiconductor Corporation
         
                
                                Taiwan Semiconductor Corporation                            
                        
                                DIODE GEN PURP 100V 3A DO214AB                            
                        $0.23
                            
                                
                                Available to order
                            
                        Reference Price (USD)
1+
                                            $0.22847
                                        500+
                                            $0.2261853
                                        1000+
                                            $0.2239006
                                        1500+
                                            $0.2216159
                                        2000+
                                            $0.2193312
                                        2500+
                                            $0.2170465
                                        Exquisite packaging
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                    Optimize your electronic designs with the ESH3B single rectifier diode from Taiwan Semiconductor Corporation. This diode, part of the Discrete Semiconductor Products family, offers exceptional rectification efficiency and thermal stability. Its compact design and high current capacity make it suitable for space-constrained applications like mobile devices, laptops, and IoT gadgets. The ESH3B is also ideal for automotive electronics, including alternators and voltage regulators, where reliability is critical. Taiwan Semiconductor Corporation's commitment to innovation ensures that the ESH3B meets the highest industry standards for performance and longevity.                
            Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 3A
- Voltage - Forward (Vf) (Max) @ If: -
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 20 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 100 V
- Capacitance @ Vr, F: 45pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AB, SMC
- Supplier Device Package: DO-214AB (SMC)
- Operating Temperature - Junction: -55°C ~ 175°C

 
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                     
                                    