F4100R17ME4B11BPSA2
Infineon Technologies
Infineon Technologies
MEDIUM POWER ECONO AG-ECONOD-311
$208.66
Available to order
Reference Price (USD)
1+
$208.66000
500+
$206.5734
1000+
$204.4868
1500+
$202.4002
2000+
$200.3136
2500+
$198.227
Exquisite packaging
Discount
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Experience next-generation power control with Infineon Technologies's F4100R17ME4B11BPSA2 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The F4100R17ME4B11BPSA2 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the F4100R17ME4B11BPSA2 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the F4100R17ME4B11BPSA2 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Configuration: Full Bridge Inverter
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 155 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 100A
- Current - Collector Cutoff (Max): 3 mA
- Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-ECONOD-6
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