F415MR12W2M1B76BOMA1
Infineon Technologies
Infineon Technologies
LOW POWER EASY AG-EASY2B-2
$284.06
Available to order
Reference Price (USD)
1+
$284.06000
500+
$281.2194
1000+
$278.3788
1500+
$275.5382
2000+
$272.6976
2500+
$269.857
Exquisite packaging
Discount
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Enhance your circuit designs with the F415MR12W2M1B76BOMA1, a premium Transistors - FETs, MOSFETs - Arrays product from Infineon Technologies. This Discrete Semiconductor Products component is designed for optimal power handling and efficiency, featuring advanced technology to reduce switching losses. Suitable for applications such as DC-DC converters, audio amplifiers, and robotics, the F415MR12W2M1B76BOMA1 delivers consistent and reliable operation. Infineon Technologies's dedication to excellence ensures this MOSFET array meets the highest industry standards.
Specifications
- Product Status: Last Time Buy
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 75A (Tj)
- Rds On (Max) @ Id, Vgs: 15mOhm @ 75A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 30mA
- Gate Charge (Qg) (Max) @ Vgs: 186nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 5.52nF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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