F445MR12W1M1B76BPSA1
Infineon Technologies
Infineon Technologies
MOSFET MODULE
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Elevate your electronics with the F445MR12W1M1B76BPSA1 from Infineon Technologies, a premier choice in the Discrete Semiconductor Products segment. This Transistors - FETs, MOSFETs - Arrays component is designed for high-efficiency power conversion and management, offering robust performance in various applications. Whether in data centers, automotive systems, or consumer electronics, the F445MR12W1M1B76BPSA1 provides the reliability and efficiency you need. Infineon Technologies's cutting-edge technology guarantees a product that stands the test of time.
Specifications
- Product Status: Obsolete
- FET Type: 4 N-Channel (Half Bridge)
- FET Feature: Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss): 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C: 25A (Tj)
- Rds On (Max) @ Id, Vgs: 45mOhm @ 25A, 15V
- Vgs(th) (Max) @ Id: 5.55V @ 10mA
- Gate Charge (Qg) (Max) @ Vgs: 62nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 1.84nF @ 800V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: AG-EASY1B-2
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