FA300R12ME4BOSA1
Infineon Technologies
Infineon Technologies
MODULE IGBT ECONO DUAL 3
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience next-generation power control with Infineon Technologies's FA300R12ME4BOSA1 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FA300R12ME4BOSA1 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FA300R12ME4BOSA1 in your next-generation HVDC systems or particle accelerator power supplies. Infineon Technologies delivers reliability where it matters most with the FA300R12ME4BOSA1 IGBT module.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
Related Products
Microsemi Corporation
APTGT30DA170D1G
Infineon Technologies
FS35R12U1T4BPSA1
Infineon Technologies
FF600R17KF6CB2NOSA1
Microsemi Corporation
APTGT300SK120D3G
Microsemi Corporation
APTGV15H120T3G
IXYS
VII50-12P1
Vishay General Semiconductor - Diodes Division
VS-GT400TH120N
Powerex Inc.
CM500HA-34A
Microsemi Corporation
APTGT75A170D1G
Microsemi Corporation