FAM65CR51DZ2
onsemi
onsemi
IGBT MOD 650V 33A 160W APMCD-B16
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Experience next-generation power control with onsemi's FAM65CR51DZ2 IGBT module. As a leader in Discrete Semiconductor Products, this transistor module features state-of-the-art trench gate technology and advanced carrier lifetime control. The FAM65CR51DZ2 offers: symmetrical blocking capability, low switching losses, and excellent cosmic ray robustness. Target applications include electric bus charging infrastructure, industrial plasma generators, and high-power laser drivers. Implement the FAM65CR51DZ2 in your next-generation HVDC systems or particle accelerator power supplies. onsemi delivers reliability where it matters most with the FAM65CR51DZ2 IGBT module.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 33 A
- Power - Max: 160 W
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: 4.86 nF @ 400 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 12-SSIP Exposed Pad, Formed Leads
- Supplier Device Package: APMCD-B16
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