FB180SA10
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
MOSFET N-CH 100V 180A SOT-227
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The FB180SA10 from Vishay General Semiconductor - Diodes Division sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Vishay General Semiconductor - Diodes Division's FB180SA10 for their critical applications.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 6.5mOhm @ 108A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 10700 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 480W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227
- Package / Case: SOT-227-4, miniBLOC
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