FCD5N60-F085
onsemi
onsemi
FCD5N60_F085 - N-CHANNEL SUPERFE
$0.00
Available to order
Reference Price (USD)
2,500+
$0.88016
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FCD5N60-F085 single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FCD5N60-F085 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 1.1Ohm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 54W (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
STMicroelectronics
STU95N4F3
IXYS
IXTH20N60
Vishay Siliconix
SI1305EDL-T1-GE3
Infineon Technologies
IPB12CN10N G
NXP USA Inc.
PSMN7R0-40LS,115
onsemi
NTMS4503NR2
Alpha & Omega Semiconductor Inc.
AOI514
STMicroelectronics
STB18N55M5
onsemi
HUFA75343S3ST
Infineon Technologies