FCMT080N65S3
onsemi
onsemi
MOSFET N-CH 650V 38A 4TDFN
$3.71
Available to order
Reference Price (USD)
1+
$3.71011
500+
$3.6730089
1000+
$3.6359078
1500+
$3.5988067
2000+
$3.5617056
2500+
$3.5246045
Exquisite packaging
Discount
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Optimize your power electronics with the FCMT080N65S3 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FCMT080N65S3 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 80mOhm @ 19A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 880µA
- Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 2765 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 260W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-TDFN (8x8)
- Package / Case: 4-PowerTSFN
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