FCP125N65S3R0
onsemi
onsemi
MOSFET N-CH 650V 24A TO220-3
$3.90
Available to order
Reference Price (USD)
1+
$3.49000
10+
$3.12600
100+
$2.58100
800+
$1.91504
1,600+
$1.79398
Exquisite packaging
Discount
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Enhance your electronic projects with the FCP125N65S3R0 single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FCP125N65S3R0 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 125mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.4mA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 181W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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