FDB13AN06A0
onsemi
onsemi
MOSFET N-CH 60V 10.9A/62A D2PAK
$2.29
Available to order
Reference Price (USD)
800+
$1.17101
1,600+
$1.07941
2,400+
$1.00895
5,600+
$0.97371
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDB13AN06A0 single MOSFET from onsemi is a game-changer in power electronics. As part of the Discrete Semiconductor Products family, it offers unparalleled efficiency in energy conversion and management. Key applications include uninterruptible power supplies (UPS), welding equipment, and industrial motor drives. With features like high temperature operation and ESD protection, the FDB13AN06A0 is a must-have in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 13.5mOhm @ 62A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 115W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Nexperia USA Inc.
BUK766R0-60E,118
Alpha & Omega Semiconductor Inc.
AO4480
STMicroelectronics
STO67N60M6
Analog Devices Inc./Maxim Integrated
MAX8704EUB
Infineon Technologies
IRL40B209
Renesas Electronics America Inc
RJK0352DSP-00#J0
STMicroelectronics
STL16N65M2
Infineon Technologies
IPP65R050CFD7AAKSA1
Vishay Siliconix
IRFI740GLCPBF
Infineon Technologies