FDB86366-F085
onsemi
onsemi
MOSFET N-CH 80V 110A D2PAK
$3.11
Available to order
Reference Price (USD)
800+
$1.37598
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDB86366-F085 from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDB86366-F085 offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 176W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
Infineon Technologies
IPA60R120P7XKSA1
GeneSiC Semiconductor
G2R1000MT33J
Vishay Siliconix
IRF9530STRRPBF
STMicroelectronics
STD10NF10T4
IXYS
IXFH16N80P
Wolfspeed, Inc.
C3M0060065K
IXYS
IXFQ30N60X
Vishay Siliconix
IRFL9014TRPBF
Infineon Technologies
IPB009N03LGATMA1
Infineon Technologies