FDC642P-F085P
onsemi
onsemi
MOSFET P-CH 20V 4A TSOT23-6
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FDC642P-F085P single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FDC642P-F085P for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TSOT-23-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Alpha & Omega Semiconductor Inc.
AO4407L
Alpha & Omega Semiconductor Inc.
AOD4120L
Panjit International Inc.
PJD2NA70_L2_00001
IXYS
IXFA3N80
Infineon Technologies
IPI77N06S3-09
Renesas Electronics America Inc
NP82N04NUG-S18-AY
Infineon Technologies
IPS04N03LB G
Infineon Technologies
IRF9530NSPBF
IXYS
IXTA220N075T7
Alpha & Omega Semiconductor Inc.