FDC6561AN
onsemi
onsemi
MOSFET 2N-CH 30V 2.5A SSOT6
$0.60
Available to order
Reference Price (USD)
3,000+
$0.20920
6,000+
$0.19571
15,000+
$0.18221
30,000+
$0.17276
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDC6561AN from onsemi is a versatile and high-efficiency component in the Discrete Semiconductor Products lineup. As part of the Transistors - FETs, MOSFETs - Arrays family, it offers excellent thermal stability and low gate charge, making it ideal for high-power applications. From renewable energy systems to telecommunications infrastructure, the FDC6561AN provides reliable performance in demanding environments. Choose onsemi for innovative semiconductor solutions that drive technological advancement.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 2.5A
- Rds On (Max) @ Id, Vgs: 95mOhm @ 2.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 220pF @ 15V
- Power - Max: 700mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: SuperSOT™-6
Related Products
Toshiba Semiconductor and Storage
SSM6P36FE,LM
Advanced Linear Devices Inc.
ALD110902SAL
onsemi
FDS89141
onsemi
FDC6333C
Diodes Incorporated
DMP2060UFDB-7
Vishay Siliconix
SQJQ960EL-T1_GE3
Infineon Technologies
IRF9956TRPBF
Microchip Technology
MSCM20XM16F4G
Infineon Technologies
BSO150N03
Diodes Incorporated