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FDD45AN06LA0_F085

onsemi
FDD45AN06LA0_F085 Preview
onsemi
MOSFET N-CH 60V 5.2A/25A TO252AA
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Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta), 25A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 5 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 55W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252AA
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

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