FDD5612
onsemi
onsemi
MOSFET N-CH 60V 5.4A TO252-3
$0.00
Available to order
Reference Price (USD)
2,500+
$0.42739
5,000+
$0.40720
12,500+
$0.39278
25,000+
$0.39068
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDD5612 by onsemi is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FDD5612 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
AUIRFS3207Z
Rohm Semiconductor
R6076ENZ1C9
Fairchild Semiconductor
FQB2P40TM
onsemi
FDC602P_F095
STMicroelectronics
STB5N52K3
Alpha & Omega Semiconductor Inc.
AO4476A_103
Vishay Siliconix
IRL510STRR
Infineon Technologies
IRFSL7437TRLPBF
Infineon Technologies
SPA08N50C3XKAS1
Vishay Siliconix