FDD8870
onsemi
onsemi
MOSFET N-CH 30V 21A/160A TO252AA
$1.56
Available to order
Reference Price (USD)
2,500+
$0.69357
5,000+
$0.66080
12,500+
$0.63740
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FDD8870 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FDD8870 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 160W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Infineon Technologies
IRF7601TRPBF
Infineon Technologies
IRF7455TRPBF
onsemi
FDM3622
Vishay Siliconix
SQA470CEJW-T1_GE3
Infineon Technologies
IPI45N06S409AKSA1
Renesas Electronics America Inc
NP90N04VLG-E1-AY
STMicroelectronics
STP24NF10
Fairchild Semiconductor
ISL9N315AD3
IXYS
IXTH10N100D
IXYS