FDME910PZT
Fairchild Semiconductor
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
$0.00
Available to order
Reference Price (USD)
5,000+
$0.29700
10,000+
$0.28600
25,000+
$0.28000
Exquisite packaging
Discount
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The FDME910PZT from Fairchild Semiconductor sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to Fairchild Semiconductor's FDME910PZT for their critical applications.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 24mOhm @ 8A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: MicroFet 1.6x1.6 Thin
- Package / Case: 6-PowerUFDFN
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