FDMS1D4N03S
onsemi
onsemi
MOSFET N-CH 30V 211A 8PQFN
$0.00
Available to order
Reference Price (USD)
3,000+
$0.99465
6,000+
$0.95781
Exquisite packaging
Discount
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The FDMS1D4N03S from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDMS1D4N03S offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 211A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.09mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 10250 pF @ 15 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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