FDMS1D5N03
onsemi
onsemi
MOSFET N-CH 30V 218A 8PQFN
$0.00
Available to order
Reference Price (USD)
3,000+
$0.96287
6,000+
$0.92721
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDMS1D5N03 from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDMS1D5N03 offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 218A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.15mOhm @ 40A, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 4.5 V
- Vgs (Max): ±16V
- Input Capacitance (Ciss) (Max) @ Vds: 9690 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Vishay Siliconix
SI9410BDY-T1-GE3
Vishay Siliconix
IRLZ34STRR
onsemi
FDBL9403L-F085
Infineon Technologies
IRLML2402TR
STMicroelectronics
STD38NH02LT4
Infineon Technologies
IRLS3034-7PPBF
Renesas Electronics America Inc
NP80N04KHE-E1-AY
Infineon Technologies
SPB100N08S2-07
Infineon Technologies
IPB25N06S3L-22
Infineon Technologies