FDMS3660AS
onsemi
onsemi
MOSFET 2N-CH 30V 13A/30A 8QFN
$0.00
Available to order
Reference Price (USD)
3,000+
$0.75522
6,000+
$0.71746
Exquisite packaging
Discount
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The FDMS3660AS by onsemi is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the FDMS3660AS provides reliable operation under stringent conditions. onsemi's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Obsolete
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 13A, 30A
- Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 2.7V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
- Power - Max: 1W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: Power56
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