FDMS4D0N12C
onsemi
onsemi
MOSFET N-CH 120V 18.5A/114A 8QFN
$5.43
Available to order
Reference Price (USD)
3,000+
$3.15467
Exquisite packaging
Discount
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Optimize your power electronics with the FDMS4D0N12C single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FDMS4D0N12C combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 120 V
- Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 114A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 4mOhm @ 67A, 10V
- Vgs(th) (Max) @ Id: 4V @ 370A
- Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 60 V
- FET Feature: -
- Power Dissipation (Max): 2.7W (Ta), 106W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
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