FDMS86569-F085
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 60V 65A POWER56
$0.00
Available to order
Reference Price (USD)
3,000+
$0.59552
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDMS86569-F085 by Fairchild Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FDMS86569-F085 is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 5.6mOhm @ 65A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2560 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 100W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerTDFN
Related Products
Infineon Technologies
IRFC250NB
Infineon Technologies
SIPC14N50C3X1SA2
Toshiba Semiconductor and Storage
TK50E10K3(S1SS-Q)
Diodes Incorporated
DMJ70H1D0SV3
Toshiba Semiconductor and Storage
TPCA8018-H(TE12LQM
Infineon Technologies
IPW65R15OCFDAFKSA1
Infineon Technologies
AUIRFU8403-701TRL
Infineon Technologies
IRF7737L2TRPBF
Vishay Siliconix
V30443-T1-GE3
Central Semiconductor Corp