Shopping cart

Subtotal: $0.00

FDMT800100DC-22897

onsemi
FDMT800100DC-22897 Preview
onsemi
FET 100V 2.95 MOHM PQFN88
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-Dual Cool™88
  • Package / Case: 8-PowerVDFN

Related Products

NXP USA Inc.

PSMN1RS-40ES127

Infineon Technologies

64-4112PBF

Microsemi Corporation

JANSR2N7389

NXP USA Inc.

PH7030ALS,115

Alpha & Omega Semiconductor Inc.

AOD4185L_003

Harris Corporation

IRFP151

Central Semiconductor Corp

CP375-CWDM3011N-CT

Infineon Technologies

ISP06P005NSATMA1

Top