FDN327N
onsemi
onsemi
MOSFET N-CH 20V 2A SUPERSOT3
$0.45
Available to order
Reference Price (USD)
3,000+
$0.13685
6,000+
$0.12856
15,000+
$0.12026
30,000+
$0.11031
75,000+
$0.10616
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FDN327N single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FDN327N combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
onsemi
NTLJS4149PTBG
Vishay Siliconix
SI7469DP-T1-GE3
onsemi
NTMFS5H409NLT3G
onsemi
FDD5N50TM-WS
STMicroelectronics
STL24N65M2
Panjit International Inc.
PJF2NA90_T0_00001
Vishay Siliconix
SQ2351ES-T1_BE3
Vishay Siliconix
SUM70030E-GE3
Rohm Semiconductor
R6520KNXC7G
Microchip Technology