FDN352AP
onsemi
onsemi
MOSFET P-CH 30V 1.3A SUPERSOT3
$0.54
Available to order
Reference Price (USD)
3,000+
$0.12524
6,000+
$0.11765
15,000+
$0.11006
30,000+
$0.10095
75,000+
$0.09715
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDN352AP by onsemi is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose onsemi for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 1.3A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.9 nC @ 4.5 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Microchip Technology
APT41M80L
Infineon Technologies
IPP65R280C6XKSA1
Infineon Technologies
IAUA180N08S5N026AUMA1
Vishay Siliconix
SI7742DP-T1-GE3
IXYS
IXFH120N30X3
Central Semiconductor Corp
CXDM3069N TR PBFREE
onsemi
FQP33N10
Rohm Semiconductor
RHK003N06FRAT146
Diodes Incorporated
DMP1022UFDEQ-7
Vishay Siliconix