FDN359BN
onsemi
onsemi
MOSFET N-CH 30V 2.7A SUPERSOT3
$0.57
Available to order
Reference Price (USD)
3,000+
$0.13994
6,000+
$0.13146
15,000+
$0.12297
30,000+
$0.11280
75,000+
$0.10856
Exquisite packaging
Discount
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The FDN359BN from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the FDN359BN offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 46mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 500mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
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