FDP038AN06A0
onsemi
onsemi
MOSFET N-CH 60V 17A/80A TO220-3
$3.90
Available to order
Reference Price (USD)
1+
$4.59000
10+
$4.11300
100+
$3.39680
800+
$2.52039
1,600+
$2.36105
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the FDP038AN06A0 single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's FDP038AN06A0 for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 3.8mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 6400 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 310W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Texas Instruments
CSD17575Q3T
onsemi
MTD6N20E1
Panjit International Inc.
PJC7404_R1_00001
Renesas Electronics America Inc
2SK4212A-ZK-E1-AY
Infineon Technologies
IPA90R500C3XKSA2
Nexperia USA Inc.
PMZ130UNEYL
Renesas Electronics America Inc
NP90N055VUK-E1-AY
Panjit International Inc.
PJQ5448-AU_R2_000A1
onsemi
FDB8896
Infineon Technologies