Shopping cart

Subtotal: $0.00

FDP2614

onsemi
FDP2614 Preview
onsemi
MOSFET N-CH 200V 62A TO220-3
$5.07
Available to order
Reference Price (USD)
1+
$4.43000
10+
$3.95600
100+
$3.24360
800+
$2.37336
1,600+
$2.21514
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200 V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 27mOhm @ 31A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 7230 pF @ 25 V
  • FET Feature: -
  • Power Dissipation (Max): 260W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3

Related Products

Vishay Siliconix

SISS64DN-T1-GE3

Diodes Incorporated

DMN4030LK3Q-13

Nexperia USA Inc.

PXN018-30QLJ

Vishay Siliconix

SQA446CEJW-T1_GE3

Microchip Technology

APT5024BLLG

Vishay Siliconix

IRF820SPBF

Infineon Technologies

IRFH5250TRPBF

Infineon Technologies

IPZ65R045C7XKSA1

Diodes Incorporated

DMN601WK-7

STMicroelectronics

STD6NF10T4

Top