FDS6298
onsemi
onsemi
MOSFET N-CH 30V 13A 8SOIC
$0.00
Available to order
Reference Price (USD)
2,500+
$0.51964
5,000+
$0.49510
12,500+
$0.47756
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the FDS6298 from onsemi, a high-performance single MOSFET designed for efficient power management in modern electronics. As part of the Discrete Semiconductor Products category, this transistor offers low on-resistance, fast switching speeds, and excellent thermal stability. Ideal for applications such as power supplies, motor control, and LED lighting, the FDS6298 ensures reliable performance in demanding environments. Upgrade your circuit designs with onsemi's cutting-edge technology today.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 9mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 5 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1108 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
onsemi
FQPF13N10L
STMicroelectronics
STI15NM60ND
STMicroelectronics
STS20N3LLH6
Infineon Technologies
IRF630NL
Vishay Siliconix
SUD50N03-16P-E3
IXYS
IXFT13N100
NXP USA Inc.
IRF640,127
IXYS
IXFQ10N80P
STMicroelectronics
STP85N3LH5
onsemi