FDS6690AS
Fairchild Semiconductor
Fairchild Semiconductor
SMALL SIGNAL FIELD-EFFECT TRANSI
$0.00
Available to order
Reference Price (USD)
2,500+
$0.39620
5,000+
$0.36887
12,500+
$0.35521
25,000+
$0.34776
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The FDS6690AS by Fairchild Semiconductor is a premium single MOSFET belonging to the Transistors - FETs, MOSFETs - Single classification. Known for its robust construction and high efficiency, this component is perfect for switching and amplification tasks. Key features include low gate charge, high current capability, and superior thermal performance. Commonly used in automotive systems, industrial automation, and renewable energy solutions, the FDS6690AS is a versatile choice for engineers seeking top-tier Discrete Semiconductor Products.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 12mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 910 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IRLU8113PBF
IXYS
IXTA220N055T7
Infineon Technologies
IRF3205STRR
NXP USA Inc.
PHD36N03LT,118
Infineon Technologies
SPB47N10L
onsemi
FQP7N60
Rohm Semiconductor
R6035KNZC8
Infineon Technologies
IRF9410TR
Nexperia USA Inc.
PMN35EN,125
IXYS