FDS6900S
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$0.53
Available to order
Reference Price (USD)
1+
$0.53000
500+
$0.5247
1000+
$0.5194
1500+
$0.5141
2000+
$0.5088
2500+
$0.5035
Exquisite packaging
Discount
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The FDS6900S by Fairchild Semiconductor is a high-performance component within the Discrete Semiconductor Products category. Designed as part of the Transistors - FETs, MOSFETs - Arrays series, it offers exceptional durability and efficiency for power-sensitive applications. From medical equipment to aerospace technology, the FDS6900S provides reliable operation under stringent conditions. Fairchild Semiconductor's innovative approach ensures this MOSFET array meets the needs of modern electronics.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), 8.2A (Ta)
- Rds On (Max) @ Id, Vgs: 30mOhm @ 6.9A, 10V, 22mOhm @ 8.2A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 5V, 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 771pF @ 15V, 1238pF @ 15V
- Power - Max: 900mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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