FDS8884
onsemi
onsemi
MOSFET N-CH 30V 8.5A 8SOIC
$0.69
Available to order
Reference Price (USD)
2,500+
$0.23018
5,000+
$0.21533
12,500+
$0.20048
25,000+
$0.19008
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the FDS8884 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the FDS8884 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 23mOhm @ 8.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Infineon Technologies
IRLB4030PBF
Infineon Technologies
IRFB52N15DPBF
Infineon Technologies
IRFR8314TRPBF
Vishay Siliconix
IRFI9530GPBF
Infineon Technologies
AUIRFR4105ZTRL
Micro Commercial Co
SI2305B-TP
IXYS
IXFP8N85XM
Micro Commercial Co
MSJP20N65-BP
onsemi
FCPF1300N80Z
Renesas Electronics America Inc