FEP30JP-E3/45
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE ARRAY GP 600V 15A TO3P
$2.95
Available to order
Reference Price (USD)
1+
$2.79000
30+
$2.39333
120+
$2.06900
510+
$1.73586
1,020+
$1.47285
2,520+
$1.42902
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Introducing Vishay General Semiconductor - Diodes Division's FEP30JP-E3/45, a game-changing diode array in the Discrete Semiconductor Products category. Specifically engineered for high-frequency rectification, this component minimizes switching losses in SMPS and RF circuits. Its hermetically sealed package provides exceptional moisture resistance for outdoor applications like traffic signal systems and railway electronics. Trust Vishay General Semiconductor - Diodes Division's decades of semiconductor expertise embedded in every FEP30JP-E3/45 for uncompromising performance.
Specifications
- Product Status: Active
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 600 V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-247AD (TO-3P)
Related Products
IXYS
DSP25-16AR
Vishay General Semiconductor - Diodes Division
BYV32-50-E3/45
Diodes Incorporated
PDS1240CTL-13
Vishay General Semiconductor - Diodes Division
VS-6CWH02FNTRLHM3
Nexperia USA Inc.
BAT754S,215
Infineon Technologies
DD260N18KHPSA1
Comchip Technology
CDBD20100-G
GeneSiC Semiconductor
MURTA20040
Vishay General Semiconductor - Diodes Division
VB10170C-E3/8W
IXYS