FES8BT-E3/45
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 8A TO220AC
$1.24
Available to order
Reference Price (USD)
1+
$1.04000
50+
$0.89320
100+
$0.74580
500+
$0.62792
1,000+
$0.51000
2,500+
$0.48052
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with the FES8BT-E3/45 single rectifier diode from Vishay General Semiconductor - Diodes Division. This Discrete Semiconductor Product is engineered for precision and efficiency, offering low forward voltage and high surge tolerance. Ideal for rectification in power adapters, welding equipment, and UPS systems, the FES8BT-E3/45 delivers consistent results under heavy loads. Its applications extend to aerospace and defense systems, where reliability cannot be compromised. Vishay General Semiconductor - Diodes Division's FES8BT-E3/45 is the go-to choice for engineers seeking robust and high-performing rectifier diodes.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 100 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 100 V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Rohm Semiconductor
RB168VWM-40TFTR
Diodes Incorporated
SD103B-F
Vishay General Semiconductor - Diodes Division
V20120SG-M3/4W
GeneSiC Semiconductor
MBRH24035
Taiwan Semiconductor Corporation
BAV19WS RRG
Vishay General Semiconductor - Diodes Division
V20PWM15HM3/I
onsemi
NRVB10100MFST3G
Microchip Technology
JANTXV1N5804US/TR
GeneSiC Semiconductor
MBRH24080
Vishay General Semiconductor - Diodes Division