FESB8AT-E3/81
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 50V 8A TO263AB
$0.78
Available to order
Reference Price (USD)
800+
$0.79278
Exquisite packaging
Discount
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The FESB8AT-E3/81 from Vishay General Semiconductor - Diodes Division is a high-performance single rectifier diode designed for efficient power conversion in various electronic applications. As part of the Discrete Semiconductor Products category, this diode ensures reliable and fast switching, making it ideal for power supplies, inverters, and converters. Its robust construction and low forward voltage drop minimize energy loss, enhancing overall system efficiency. Common applications include AC/DC conversion, voltage clamping, and reverse polarity protection in automotive, industrial, and consumer electronics. Trust Vishay General Semiconductor - Diodes Division's FESB8AT-E3/81 for superior performance and durability in demanding environments.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 950 mV @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 50 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
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