FESB8HTHE3_A/P
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 500V 8A TO263AB
$0.89
Available to order
Reference Price (USD)
1+
$0.89100
500+
$0.88209
1000+
$0.87318
1500+
$0.86427
2000+
$0.85536
2500+
$0.84645
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic systems with the FESB8HTHE3_A/P single rectifier diode by Vishay General Semiconductor - Diodes Division. As a vital component in the Discrete Semiconductor Products range, this diode offers superior rectification with minimal power loss. Its high-temperature tolerance and fast switching make it ideal for use in electric vehicles, industrial automation, and renewable energy systems. The FESB8HTHE3_A/P is also a preferred choice for consumer electronics, including TVs and audio equipment, where efficiency and reliability are paramount. Choose Vishay General Semiconductor - Diodes Division's FESB8HTHE3_A/P for advanced semiconductor solutions.
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500 V
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 10 µA @ 500 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263AB (D²PAK)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Yangzhou Yangjie Electronic Technology Co.,Ltd
S16-F1-0000HF
Panjit International Inc.
ER2A_R1_00001
Microchip Technology
APT30D20SG
Phoenix Contact
2833657
Vishay General Semiconductor - Diodes Division
US1MHE3_A/I
Vishay General Semiconductor - Diodes Division
MBRB1635HE3_B/P
Power Integrations
LXA04T600
GeneSiC Semiconductor
GB50SLT12-247
Taiwan Semiconductor Corporation
1N5406GH
Vishay General Semiconductor - Diodes Division