FF100R12KS4HOSA1
Infineon Technologies
Infineon Technologies
IGBT MOD 1200V 150A 780W
$130.70
Available to order
Reference Price (USD)
10+
$82.73100
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Infineon Technologies's FF100R12KS4HOSA1 represents the cutting edge in Transistors - IGBTs - Modules technology. This discrete semiconductor product delivers superior power control with its optimized gate-drive characteristics and short-circuit ruggedness. The module's innovative design features include an advanced NPT trench construction and low inductance package. Primary applications include traction systems, induction heating, and high-frequency power supplies. A typical use case would be implementing the FF100R12KS4HOSA1 in industrial servo drives or medium-voltage frequency converters. Trust Infineon Technologies's expertise in IGBT modules for energy-efficient power management solutions.
Specifications
- Product Status: Active
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 150 A
- Power - Max: 780 W
- Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 100A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 650 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
Related Products
Infineon Technologies
FP75R06KE3BOSA1
Infineon Technologies
FF650R17IE4BOSA1
Microchip Technology
APTGT100DA60T1G
Infineon Technologies
FF600R12KE4EBOSA1
Infineon Technologies
FS500R17OE4DBOSA1
Infineon Technologies
FF450R12ME4PBOSA1
Infineon Technologies
FS225R17OE4PBOSA1
Microchip Technology
APTGT50H60T3G
Microchip Technology
APT50GP60JDQ2
Infineon Technologies