FF600R17KE3B2S1NOSA1
Infineon Technologies
Infineon Technologies
FF600R17 - INSULATED GATE BIPOLA
$644.86
Available to order
Reference Price (USD)
1+
$644.86000
500+
$638.4114
1000+
$631.9628
1500+
$625.5142
2000+
$619.0656
2500+
$612.617
Exquisite packaging
Discount
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The FF600R17KE3B2S1NOSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the FF600R17KE3B2S1NOSA1 provides consistent performance in demanding applications. Choose Infineon Technologies for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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