FF650R17IE4PBOSA1
Infineon Technologies
Infineon Technologies
FF650R17 - INSULATED GATE BIPOLA
$498.70
Available to order
Reference Price (USD)
3+
$507.42333
Exquisite packaging
Discount
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Experience unmatched performance with the FF650R17IE4PBOSA1 Bipolar Junction Transistor (BJT) by Infineon Technologies. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the FF650R17IE4PBOSA1 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose Infineon Technologies for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: -
- Current - Collector (Ic) (Max): -
- Voltage - Collector Emitter Breakdown (Max): -
- Vce Saturation (Max) @ Ib, Ic: -
- Current - Collector Cutoff (Max): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: -
- Power - Max: -
- Frequency - Transition: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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