FGA30S120P
onsemi
onsemi
IGBT TRENCH/FS 1300V 60A TO3PN
$6.66
Available to order
Reference Price (USD)
1+
$4.45000
10+
$4.01300
450+
$3.15038
900+
$2.84116
1,350+
$2.41801
Exquisite packaging
Discount
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Optimize your power systems with the FGA30S120P Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGA30S120P delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 1300 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 150 A
- Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
- Power - Max: 348 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 78 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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