FGA50N100BNTDTU
onsemi
onsemi
IGBT 1000V 50A 156W TO3P
$0.00
Available to order
Reference Price (USD)
1+
$4.79000
10+
$4.31500
450+
$3.38956
900+
$3.05760
1,350+
$2.60333
Exquisite packaging
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The FGA50N100BNTDTU from onsemi is a high-performance Single IGBT transistor designed for robust and efficient power management in various applications. As part of the Discrete Semiconductor Products category, this IGBT offers low saturation voltage and fast switching capabilities, making it ideal for high-efficiency power conversion. Its advanced design ensures thermal stability and durability, even under demanding conditions. Common applications include motor drives, solar inverters, and industrial power supplies, where reliable and efficient switching is crucial. Choose FGA50N100BNTDTU for superior performance in your next power electronics project.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT and Trench
- Voltage - Collector Emitter Breakdown (Max): 1000 V
- Current - Collector (Ic) (Max): 50 A
- Current - Collector Pulsed (Icm): 100 A
- Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
- Power - Max: 156 W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 275 nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 1.5 µs
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
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