FGAF30S65AQ
onsemi
onsemi
IGBT 650V 30A TO-3PF
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The FGAF30S65AQ Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGAF30S65AQ ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGAF30S65AQ into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 60 A
- Current - Collector Pulsed (Icm): 90 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
- Power - Max: 83 W
- Switching Energy: 515µJ (on), 140µJ (off)
- Input Type: Standard
- Gate Charge: 58 nC
- Td (on/off) @ 25°C: 18ns/92ns
- Test Condition: 400V, 15A, 13Ohm, 15V
- Reverse Recovery Time (trr): 267 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PF-3
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