FGB20N6S2D
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL IGBT
$0.67
Available to order
Reference Price (USD)
400+
$1.94250
Exquisite packaging
Discount
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Enhance your electronic projects with the FGB20N6S2D Single IGBT transistor from Fairchild Semiconductor. This Discrete Semiconductor Product offers exceptional performance with low switching losses and high current capacity. Suitable for applications such as medical equipment, aerospace systems, and consumer electronics, the FGB20N6S2D ensures precision and reliability. Fairchild Semiconductor's cutting-edge technology guarantees a component that meets the highest industry standards. Choose FGB20N6S2D for efficient and durable power solutions.
Specifications
- Product Status: Obsolete
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 28 A
- Current - Collector Pulsed (Icm): 40 A
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
- Power - Max: 125 W
- Switching Energy: 25µJ (on), 58µJ (off)
- Input Type: Standard
- Gate Charge: 30 nC
- Td (on/off) @ 25°C: 7.7ns/87ns
- Test Condition: 390V, 7A, 25Ohm, 15V
- Reverse Recovery Time (trr): 31 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK (TO-263)
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