FGH40N60SMDF
onsemi
onsemi
IGBT FIELD STOP 600V 80A TO247-3
$6.72
Available to order
Reference Price (USD)
1+
$4.74000
10+
$4.27200
450+
$3.35364
900+
$3.02446
1,350+
$2.57401
Exquisite packaging
Discount
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Optimize your power systems with the FGH40N60SMDF Single IGBT transistor from onsemi. This Discrete Semiconductor Product is engineered for precision and efficiency, offering superior thermal performance and low EMI characteristics. Ideal for applications like electric vehicle charging stations, renewable energy systems, and industrial automation, the FGH40N60SMDF delivers consistent and reliable operation. Trust onsemi's expertise in semiconductor technology to enhance your power management solutions with this high-quality IGBT.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 40A
- Power - Max: 349 W
- Switching Energy: 1.3mJ (on), 260µJ (off)
- Input Type: Standard
- Gate Charge: 119 nC
- Td (on/off) @ 25°C: 12ns/92ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): 90 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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