FGH40T65SH-F155
onsemi
onsemi
IGBT 650V 80A 268W TO-247-3
$0.00
Available to order
Reference Price (USD)
450+
$2.84000
Exquisite packaging
Discount
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The FGH40T65SH-F155 Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGH40T65SH-F155 ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGH40T65SH-F155 into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 650 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 120 A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
- Power - Max: 268 W
- Switching Energy: 1.01mJ (on), 297µJ (off)
- Input Type: Standard
- Gate Charge: 72.2 nC
- Td (on/off) @ 25°C: 19.2ns/65.6ns
- Test Condition: 400V, 40A, 6Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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