FGH80N60FDTU
onsemi
onsemi
IGBT 600V 80A 290W TO247
$0.00
Available to order
Reference Price (USD)
1+
$4.45000
10+
$4.01300
450+
$3.15038
900+
$2.84116
1,350+
$2.41801
Exquisite packaging
Discount
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Upgrade your power management systems with the FGH80N60FDTU Single IGBT transistor from onsemi. This Discrete Semiconductor Product boasts high current density and excellent thermal conductivity, making it suitable for high-power applications. From railway systems to wind turbines, the FGH80N60FDTU provides reliable and efficient operation. onsemi's advanced semiconductor technology guarantees a component that excels in performance and durability. Choose FGH80N60FDTU for your critical power needs.
Specifications
- Product Status: Obsolete
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 80 A
- Current - Collector Pulsed (Icm): 160 A
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
- Power - Max: 290 W
- Switching Energy: 1mJ (on), 520µJ (off)
- Input Type: Standard
- Gate Charge: 120 nC
- Td (on/off) @ 25°C: 21ns/126ns
- Test Condition: 400V, 40A, 10Ohm, 15V
- Reverse Recovery Time (trr): 36 ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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