FGY75N60SMD
Fairchild Semiconductor
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
$0.00
Available to order
Reference Price (USD)
1+
$6.48000
10+
$5.86900
450+
$4.68751
900+
$4.29376
1,350+
$3.76875
Exquisite packaging
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The FGY75N60SMD by Fairchild Semiconductor is a premium Single IGBT transistor designed for high-power applications. Part of the Discrete Semiconductor Products family, it features fast switching speeds and high input impedance, reducing power loss and improving efficiency. Commonly used in motor control, power supplies, and renewable energy inverters, this IGBT is built to withstand harsh environments. With Fairchild Semiconductor's reputation for quality, the FGY75N60SMD is a dependable choice for demanding electronic designs.
Specifications
- Product Status: Active
- IGBT Type: Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 225 A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 75A
- Power - Max: 750 W
- Switching Energy: 2.3mJ (on), 770µJ (off)
- Input Type: Standard
- Gate Charge: 248 nC
- Td (on/off) @ 25°C: 24ns/136ns
- Test Condition: 400V, 75A, 3Ohm, 15V
- Reverse Recovery Time (trr): 55 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3 Variant
- Supplier Device Package: PowerTO-247-3
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