FGY75T95SQDT
onsemi
onsemi
IGBT 950V 75A
$9.52
Available to order
Reference Price (USD)
1+
$9.52000
500+
$9.4248
1000+
$9.3296
1500+
$9.2344
2000+
$9.1392
2500+
$9.044
Exquisite packaging
Discount
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The FGY75T95SQDT Single IGBT transistor by onsemi is a high-performance component in the Discrete Semiconductor Products category. Featuring low switching losses and high reliability, it is perfect for demanding applications like medical imaging, defense systems, and data centers. The FGY75T95SQDT ensures precise power control and long-term stability. With onsemi's reputation for excellence, this IGBT is a trusted choice for engineers worldwide. Incorporate FGY75T95SQDT into your projects for superior results.
Specifications
- Product Status: Obsolete
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 950 V
- Current - Collector (Ic) (Max): 150 A
- Current - Collector Pulsed (Icm): 300 A
- Vce(on) (Max) @ Vge, Ic: 2.11V @ 15V, 75A
- Power - Max: 434 W
- Switching Energy: 8.8mJ (on), 3.2mJ (off)
- Input Type: Standard
- Gate Charge: 137 nC
- Td (on/off) @ 25°C: 28.8ns/117ns
- Test Condition: 600V, 75A, 4.7Ohm, 15V
- Reverse Recovery Time (trr): 259 ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247-3
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