FII24N170AH1
IXYS
IXYS
IGBT H BRIDGE 1700V 18A I4PAK5
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The FII24N170AH1 from IXYS is a high-performance IGBT array designed for robust power management in industrial applications. As part of the Discrete Semiconductor Products category, this transistor array combines efficiency with thermal stability, making it ideal for high-frequency switching. Key features include low saturation voltage, fast switching speed, and integrated anti-parallel diodes. These IGBT arrays are widely used in motor drives, solar inverters, and welding equipment, ensuring reliable performance in demanding environments like automotive manufacturing and renewable energy systems.
Specifications
- Product Status: Obsolete
- IGBT Type: NPT
- Configuration: Half Bridge
- Voltage - Collector Emitter Breakdown (Max): 1700 V
- Current - Collector (Ic) (Max): 18 A
- Power - Max: 140 W
- Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 16A
- Current - Collector Cutoff (Max): 100 µA
- Input Capacitance (Cies) @ Vce: 2.4 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: i4-Pac™-4, Isolated
- Supplier Device Package: ISOPLUS i4-PAC™